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PTB 20237 150 Watts, 470-860 MHz UHF TV Power Transistor
Description
The 20237 is a class AB, NPN, common emitter UHF TV power transistor intended for 28 Vdc operation from 470 to 860 MHz. Rated at 150 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard.

470-860 MHz, 28 Volts Class AB Characteristics 50% Collector Efficiency at 150 Watts Gold Metallization Silicon Nitride Passivated
Typical Output Power vs. Input Power
200
Output Power (Watts)
175 150 125 100 75 50 25 0 0 4 8 12 16 20 24
202 37
LOT COD E
VCC = 28 V ICQ = 0.800 A Total f = 860 MHz
Input Power (Watts)
Package 20236
Maximum Ratings
Parameter
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) TSTG RJC
Symbol
VCER VCBO VEBO IC PD
Value
55 60 4 25 330 1.89 -40 to +150 0.53
Unit
Vdc Vdc Vdc Adc Watts W/C C C/W
1 9/28/98
PTB 20237
Electrical Characteristics
Characteristic
Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested)
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Conditions
IC = 0 A, IB = 100 A IC = 0 A, IE = 5 mA VCE = 5 V, IC = 1 mA
Symbol
V(BR)CEO V(BR)EBO hFE
Min
28 3.5 20
Typ
30 5 50
Max
-- -- 100
Units
Volts Volts --
RF Specifications (100% Tested)
Characteristic
Gain (VCC = 28 Vdc, POUT = 150 W, ICQ = 800 mA Total, f = 470, 860 MHz) Collector Efficiency (VCC = 28 Vdc, POUT = 150 W, ICQ = 800 mA Total, f = 470, 860 MHz) Intermodulation Distortion (VCC = 28 Vdc, ICQ = 800 mA Total, POUT = 100 W(PEP), f1 = 855.25 MHz, Vision = -8 dB, f2 = 859.75 MHz, Subcarrier = -16 dB, f3 = 860.75 MHz, Sound = -10 dB) Load Mismatch Tolerance (VCC = 28 Vdc, POUT = 150 W(PEP), ICQ = 800 mA Total, f1 = 860.0 MHz, f2 = 860.1--all phase angles at frequency of test)
Symbol
Gpe
Min
8
Typ
9
Max
--
Units
dB
C
50
--
--
%
IMD
--
-44
--
dBc
--
--
3:1
--
Typical Performance
Gain vs. Frequency
11
(as measured in a broadband circuit)
10
Gain (dB)
9
VCC = 28 V
8
ICQ = 0.800 A Total Pout = 150 W
520 570 620 670 720 770 820 870
7 470
Frequency (MHz)
2
5/6/98
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Impedance Data (shown for fixed-tuned broadband circuit)
VCC = 28 Vdc, POUT = 150 W, ICQ = 800 mA Total
PTB 20237
Z Source
Z Load
Z0 = 50
Frequency
MHz 470 560 665 760 860 R 1.10 1.20 2.35 7.10 6.75
Z Source
jX 3.00 4.30 5.85 7.10 -1.10 R 4.40 3.15 2.50 1.85 1.50
Z Load
jX 0.80 1.50 0.35 -0.55 -0.60
Test Circuit
Schematic for broadband test fixture (f = 470-860)
DUT C1 C2, 3 C4, 16 C5,7 C6, 8 C9 C10 C11 C12 C13 20237 10 pF 0.001 uF 100 uF, 50 V 3.6 pF 0.35-3.5 pF 15 pF 7.5 pF 12 pF 8.2 pF 0.35-3.5 pF C14 C15 C17, 18 C19 C20, 21 L1 L2 R1 R2 R3-6 Circuit Board 3
5/6/98
ATC 100A ATC 100B Electrolytic Capacitor ATC 100B Johanson Trimmer Dialectric Labs ATC 100B ATC 100B ATC 100B Johanson Trimmer
7.5 pF 75 pF 0.1 uF 22 pF 100 pF
ATC 100B ATC 100B 1206 Chip ATC 100B ATC 100A 25 W, Semi-rigid Balun 25 W, Semi-rigid Balun 100 W Chip Resistor 100 W Chip Resistor 1W Chip Resistor Copper Clad PTFE er = 2.5, .031" Thick
PTB 20237
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Components Layout (not to scale)
Artwork (1 inch
)
Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434
1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower
Specifications subject to change without notice. LF (c) 1997 Ericsson Inc. EUS/KR 1301-PTB 20237 Uen Rev. B 09-28-98
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